Tender for Combined ICP-DRIE and spectrophotometer equipment for on-site photoluminescence

The tender identified with expedient MY25/IUTNA/S/75 is related to the sector Supplies. This tender, published on November 20, 2025 and last updated on November 20, 2025, aims to The technique of DRIE (Deep Reactive Ion Etching) consists of deep and highly accurate engraving of semiconductor materials, such as silicon, by means of a reactive plasma process. This method allows the creation of three-dimensional structures with vertical profiles and high aspect ratio, which is essential in the manufacture of photonic and microelectronic devices (MEMS). Currently, the NTC works in the manufacture of photonic devices, but does not have a technique that allows to make deep engravings with the precision and control offered by the DRIE. The implementation of this technique would significantly improve the quality and functionality of the manufactured components, opening up new possibilities in the design and manufacture of advanced devices. The photoluminescence spectroscopy technique, integrated directly into the chamber of an ICP-DRIE team, will allow accurate and real-time analysis of the optical properties of the samples and the geometry of the structures during the engraving process. It also ensures high sensitivity and spectral resolution, facilitating the measurement of low intensity signals and improving monitoring capacity in advanced applications. Its implementation ensures compatibility with standard detection systems and offers flexibility in experimental configuration, which reinforces the versatility of the equipment for research and development in semiconductor materials and nanostructures. The NTC receives increasing external demand for manufacturing applications such as optical mirrors incorporated into MEMS structures (micro-electromechanical systems) or medical tomography detectors or other sensors that require deep attacks on silicon with high aspect factor (25 or higher) (depth ratio over width of an engraved structure) and for the moment tries to perform them with a process of “standard” plasma engraving but does not allow such high aspect factor attacks. A team dedicated to the deep attack of silicon (DRIE), whether with the “Bosch” or “cryogenic” method, would meet this growing external demand. The acquisition of a combined ICP-DRIE and Spectrophotometer for “in-situ” photoluminescence would represent a strategic advance for the institute, both in research and technology transfer. This system would allow high-precision and depth engravings in silicon, which is essential for the development of state-of-the-art photonic and microelectronic devices. Having this capacity would significantly improve the competitiveness of the institute, allowing the manufacture of complex three-dimensional structures with high resolution and uniformity. This would not only enhance internal projects, but also attract collaborations with research groups and companies that require advanced micro manufacturing processes. In addition, the DRIE would facilitate access to competitive research projects, overcoming a current limitation due to the lack of this technology. The requested infrastructure would position the NTC as a benchmark in the manufacture of nanophotonic devices and MEMS, matching its capabilities with the most advanced centres in Europe. The ability to make deep and selective engravings in wafers up to 8 inches (also compatible with 6 inches and samples) would be a differentiating advantage, consolidating the NTC as a technological hub unique in its field. In short, this equipment would not only strengthen the scientific vanguard of the institute, but would also boost its impact on the industry, favouring innovation in integrated photonics and micro/nanofabrication.". The estimated value of the contract is €375,000.00 , with a budget excluding taxes of €375,000.00 . The procedure modality is Open, and currently its status is Published.

This tender is located in Valencia, Valencia/València, ES, Comunidad Valenciana, ES. The main source of this information is Plataforma de Contratación del Sector Público .

The tender is classified under several CPV codes, including CPV, among others Microelectronic machinery and apparatus (No code: 31712100), among others.